100 mm Corning 7980 High Purity Fused Silica (HPFS) Wafer, 500 um Thick, DSP, w Bevel, Primary Flat Only Corning High Purity Fused Silica (HPFS) 7980 is a high purity non-crystalline silica glass with excellent optical qualities. It has extraordinarily low refractive index variations, lowbirefringence values, ultra-low thermal expansion coefficient and exceptional transmittance from the deep ultraviolet through…
100 mm JGS1 Ultraviolet (UV) Grade Fused Silica Wafer, 500 um, DSP, w Bevel, Primary Flat Only The JGS1 Ultraviolet (UV) Grade Fused Silica is free of bubbles and inclusions, transparent in the ultraviolet and visible regions, and has no absorption band between 170 and 250 nm. UV grade Fused Silica (JGS1) is synthetic amorphous silicon…
2 inch diameter Silicon Carbide (SiC) Crystal Substrates, SiC Wafers Specifications Grade Production Grade Research Grade Dummy Grade Diameter 50.8 mm + – 0.38 mm Thickness N-type 330 um + – 25 um Semi-Insulating 250 um + – 25 um Wafer Orientation On axis: <0001> + – 0.5 deg for 6H-N 4H-N 4H-SI 6H-SI Off axis:…
4 inch diameter Silicon Carbide (SiC) Crystal Substrate, SiC Wafers Specifications Grade Zero MPD Grade Production Grade Research Grade Dummy Grade Diameter 100.0 mm + – 0.5 mm Thickness 500 um + – 25 um (semi-insulating type), 350 um + – 25 um (N type) Wafer Orientation On axis: <0001> + – 0.5 deg for…
6 inch diameter Silicon Carbide (SiC) Wafers Specifications Both N-Type and Semi-Insulating Type 4H 6 inch SiC wafers are available. Please contact us for the current lead time. Download the PDF file here. Grade Zero MPD Grade Production Grade Research Grade Dummy Grade Diameter 150.0 mm + – 0.2 mm Thickness 500 um + –…
Main Product Parameters Growth method Czochralski method Crystal structure M3 Unit cell constant a=5.65754 Å Density 5.323 g cm3 Melt point 937.4 °C Doped material Undoped Sb – doped In Ga – doped Type N N P Resistivity 35 Ohm-cm 0.05 Ohm-cm 0.05~0.1 Ohm-cm EPD <5000 cm2 <5000 cm2 <5000 cm2 Size 10×5, 10×10, 15×15,…
10 mm x 10 mm Silicon Carbide Crystal Substrate 4H (0001) N-Type SiC, Research Grade, Double Side Polished, Si face CMP polished (epi ready) Product SKU# WA0335 Size 10 mm x 10 mm (+ – 1mm) Thickness 350 um + – 25 um (N type) Crystal Orientation 4 + – 0.5 deg off axis <0001>…
10 mm x 10 mm 6H Semi-Insulating Type SiC (0001), Research Grade, Silicon Carbide Crystal Substrate, Single Side Polished, Si face CMP polished (epi ready) Product SKU# WA0337 Size 10 mm x 10 mm (+ – 1 mm) Thickness 330 um + – 25 um (SI type) Crystal Orientation On axis: <0001> + – 0.5…
SCHOTT D263 glass is a clear, lightweight, low fluorescence, borosilicate glass. It has a good chemical resistance and uniform optical transmittance in the visible range. It has higher infrared transmission than most other thin glass materials. It is not permeable to moisture and flexible like plastic. Order D263 glass wafers with the best price on the market…
100 mm SCHOTT N-BK7 Glass Wafer, 500 um Thick, DSP, w Bevel, Primary Flat Only SCHOTT N-BK7 is a borosilicate high purity clear optical glass which has unique features such as: excellent optical quality, uniform transmission in visible wave range, free of bubbles and inclusions and very high refractive index homogeneity. It is widely used…
10x10x1 mm 4H Semi-Insulating Type SiC (0001), Research Grade, Silicon Carbide Crystal Substrate, Double Side Polished, Si face CMP polished (epi ready) Product SKU# WA0334 Size 10 mm x 10 mm (+ – 1mm) Thickness 1000 um + – 50 um (SI type) Crystal Orientation On axis: <0001> + – 0.5 deg for 4H-SI Micropipe…
Features of 2 in Sapphire Wafer A-plane (11-20) Single Crystal Al2O3 Material: High Purity >99.996%, single crystal Al2O3 Dimension: 50.8 mm + – 0.1 mm Thickness: 0.50 mm standard Lattice Parameter: a=4.785 A, c=12.991 A Density: 3.98 g cm3 Orientation: A-plane (11-20) 0.2 + – 0.1 degree Primary Flat Orientation: C-plane Primary flat length: 16.0…
Features of 2 in Sapphire Wafer M-plane (10-10) Single Crystal Al2O3 Material: High Purity >99.996%, single crystal Al2O3 Dimension: 50.8 mm + – 0.1 mm Thickness: 0.43 mm standard Lattice Parameter: a=4.785 A, c=12.991 A Density: 3.98 g cm3 Orientation: M-plane (10-10) 0.2 + – 0.1 degree Primary flat orientation: C-plane [11-20] + – 0.2…
MSE PRO 2 inch Sapphire Wafer R-plane (1-102) Single Crystal Al2O3 Material: High Purity >99.996%, single crystal Al2O3 Dimension: 50.8 mm + – 0.1 mm Thickness: 0.43 mm standard Lattice Parameter: a=4.785 A, c=12.991 A Density: 3.98 g cm3 Orientation: R-plane (1-102) 0.2 + – 0.1 degree Primary Flat orientation: Projected C-axis 45 + –…
Features for 2 in Mg-doped P-type Gallium Nitride Template on Sapphire Substrate Product SKU#: WA0207 for SSP, WA0248 for DSP Conductivity type: P-Type (Mg-doped) Dimension: 50.8 mm + – 0.1 mm (2 inch diameter) GaN Thickness: 4.5 + – 0.5 um Usable area: > 90% Orientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1 deg…
